The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Mar. 14, 2022
Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventor:

Jeffrey B. Shealy, Davidson, NC (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01); H10N 30/06 (2023.01); H10N 30/072 (2023.01);
U.S. Cl.
CPC ...
H03H 9/173 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/0514 (2013.01); H03H 9/0533 (2013.01); H03H 9/105 (2013.01); H03H 9/175 (2013.01); H03H 9/176 (2013.01); H03H 9/542 (2013.01); H03H 9/566 (2013.01); H03H 9/568 (2013.01); H10N 30/06 (2023.02); H10N 30/072 (2023.02); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01);
Abstract

A method and structure for single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region, a support layer formed overlying the enhancement layer, and an air cavity formed through a portion of the support layer. Single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer.


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