The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Mar. 03, 2021
Applicant:

Inphi Corporation, San Jose, CA (US);

Inventors:

Xiaoguang He, Diamond Bar, CA (US);

Radhakrishnan L. Nagarajan, San Jose, CA (US);

Assignee:

MARVELL ASIA PTE LTD, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/02 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0264 (2013.01); H01S 5/021 (2013.01); H01S 5/3434 (2013.01);
Abstract

A laser device based on silicon photonics with an in-cavity power monitor includes a gain chip mounted on a silicon photonics substrate and configured to emit light in an active region bounded between a frontend facet with low reflectivity and a backend facet with anti-reflective characteristics. The laser device further includes a wavelength tuner formed with waveguides in the silicon photonics substrate optically coupled to the backend facet to receive light from the gain chip and configured to have a reflector with high reflectivity to reflect the light in an extended cavity formed with the frontend facet through which a laser with a tuned wavelength and amplified power is outputted. Additionally, the laser device includes a photodiode formed in the silicon photonics substrate and coupled to the waveguides in the extended cavity right in front of the reflector to measure power of light thereof.


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