The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Apr. 19, 2021
Applicant:

Seoul Semiconductor Co., Ltd., Ansan-si, KR;

Inventors:

Bang Hyun Kim, Ansan-si, KR;

Young Hye Seo, Ansan-si, KR;

Jae Ho Lee, Ansan-si, KR;

Jong Min Lee, Ansan-si, KR;

Seoung Ho Jung, Ansan-si, KR;

Eui Sung Jeong, Ansan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/60 (2010.01); G02B 3/08 (2006.01); H01L 33/20 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); G02B 3/08 (2013.01); H01L 33/20 (2013.01); H01L 33/504 (2013.01); H01L 33/60 (2013.01); H01L 33/505 (2013.01);
Abstract

A light emitting device including a substrate, a light emitting structure disposed on the substrate and having a first light emitting region, a second light emitting region, and a third light emitting region, and an insulation layer to block unintended electrical connection between the first light emitting region and the second light emitting region, or between the second light emitting region and the third light emitting region, in which each of the first light emitting region, the second light emitting region, and the third light emitting region comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and a center of the first light emitting region overlaps a center of the second light emitting region and a center of the third light emitting region.


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