The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Dec. 02, 2020
Applicant:
Playnitride Display Co., Ltd., Miaoli County, TW;
Inventors:
Bo-Wei Wu, Miaoli County, TW;
Shiang-Ning Yang, Miaoli County, TW;
Yu-Yun Lo, Miaoli County, TW;
Yi-Chun Shih, Miaoli County, TW;
Assignee:
PlayNitride Display Co., Ltd., Miaoli County, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 33/44 (2013.01);
Abstract
A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the side of the substrate. The transmittance of the protective layer for a light source with wavelength smaller than 360 nm is less than 20%.