The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Sep. 25, 2019
Applicant:
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Inventor:
Yasuhiro Watanabe, Akita, JP;
Assignee:
DOWA Electronics Materials Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01);
Abstract
Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting devicehas an emission wavelength of 200 nm to 350 nm, and includes an n-type layer, a light emitting layer, an electron blocking layer, and a p-type contact layerin this order. The electron blocking layerhas a co-doped region layer, the p-type contact layeris made of p-type AlGaN (0≤x≤0.1), and the p-type contact layerhas a thickness of 300 nm or more.