The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Oct. 04, 2022
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Min Jang, Ansan-si, KR;

Chang Yeon Kim, Ansan-si, KR;

Myoung Hak Yang, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0016 (2013.01); H01L 27/156 (2013.01); H01L 33/14 (2013.01); H01L 33/387 (2013.01);
Abstract

A light emitting device includes a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface of the first n-type semiconductor layer, a second light emitting part spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode and exposing a portion of a first surface of the second n-type semiconductor layer, and a first bonding layer on which the first and second light emitting parts are disposed and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.


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