The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Feb. 21, 2020
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Shuji Manda, Kanagawa, JP;
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 27/14601 (2013.01); H01L 31/03529 (2013.01); H01L 31/1075 (2013.01); H01L 31/186 (2013.01);
Abstract
A light receiving element () according to an embodiment of the present disclosure includes: a semiconductor layer including a compound semiconductor material; a first impurity diffusion region (A) provided on one surface of the semiconductor layer; and a second impurity diffusion region (B) provided around the first impurity diffusion region (A). The second impurity diffusion region (B) has a lower impurity concentration than an impurity concentration of the first impurity diffusion region (A).