The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Sep. 28, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungmin Park, Seoul, KR;

Haeryong Kim, Seongnam-si, KR;

Young-geun Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H10B 12/00 (2023.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02197 (2013.01); H01L 21/7624 (2013.01); H01L 28/55 (2013.01); H01L 28/65 (2013.01); H10B 12/00 (2023.02); C23C 16/40 (2013.01); H01L 28/60 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes ABOwhere 'A' is a first metal element and 'B' is a second metal element having a work function greater than that of the first metal element. The dielectric layer includes CDOwhere ‘C’ is a third metal element and ‘D’ is a fourth metal element. The lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. The first layer includes the first metal element and oxygen. The second layer includes the second metal element and oxygen. The dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.


Find Patent Forward Citations

Loading…