The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Feb. 22, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sangbum Lee, Hwaseong-si, KR;

Inho Kim, Hwaseong-si, KR;

Geunwoo Ko, Yongin-si, KR;

Yongmin Kwon, Hwaseong-si, KR;

Juhyun Kim, Seoul, KR;

Jungwook Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/0093 (2020.05); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 33/505 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A semiconductor light-emitting device includes a light-emitting pixel region and a pad region, and includes light-emitting structures, a partition wall structure, a passivation structure, and a fluorescent layer, positioned in the light-emitting pixel region, and a pad unit positioned in the pad region. The partition wall structure includes partition walls defining pixel spaces. The passivation structure surrounds the partition walls and includes a first passivation layer including a first insulating material and a second passivation layer including a second insulating material different from the first insulating material. The passivation structure includes a first portion on a top surface of the partition walls, a second portion on a sidewall of the partition walls, and a third portion between the light-emitting structures and the fluorescent layer. A first thickness of the first portion is less than or equal to a second thickness of the second portion.


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