The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Jul. 25, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Kyoung-In Lee, Icheon-si, KR;

Sung-Kun Park, Sejong-si, KR;

Sun-Ho Oh, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14831 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01);
Abstract

An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.


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