The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

May. 18, 2020
Applicant:

Hangzhou Mdk Opto Electronics Co., Ltd, Hangzhou, CN;

Inventors:

Wenzhi Ge, Hangzhou, CN;

Yiwei Wang, Hangzhou, CN;

Gang Wang, Hangzhou, CN;

Kevin Weng, Hangzhou, CN;

Hirokazu Yajima, Hangzhou, CN;

Junnan Jiang, Hangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H04N 23/54 (2023.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14618 (2013.01); C23C 16/0227 (2013.01); C23C 16/402 (2013.01); C23C 16/403 (2013.01); C23C 16/405 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/45555 (2013.01); H01L 27/14625 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H04N 23/54 (2023.01); H01L 27/14689 (2013.01);
Abstract

An ALD preparation method for eliminating camera module dot defects includes: placing a base substrate in a reaction chamber, and heating to 100-400° C.; introducing a first reaction precursor into the reaction chamber to chemically adsorb the first reaction precursor on the base substrate to form a first film layer; removing the excess first reaction precursor, and purging with inert gas; introducing a second reaction precursor into the reaction chamber to create a reaction between the second reaction precursor and the first reaction precursor to form a first refractive index layer; removing the excess second reaction precursor and a by-product of the reaction, and purging with inert gas; introducing a third reaction precursor into the reaction chamber to chemically adsorb the third reaction precursor on a surface of the first refractive index layer to form a second film layer; and removing the excess third reaction precursor, and purging with inert gas.


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