The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Apr. 22, 2020
Applicants:

Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Kui Gong, Beijing, CN;

Li Li, Beijing, CN;

Wei Sun, Beijing, CN;

Yuhu Zhang, Beijing, CN;

Lei Yu, Beijing, CN;

Hongwei Wang, Beijing, CN;

Ru Xu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01);
Abstract

The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.


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