The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Dec. 30, 2020
Applicant:
Skyworks Solutions, Inc., Irvine, CA (US);
Inventors:
Assignee:
Skyworks Solutions, Inc., Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/66 (2006.01); H01L 23/522 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/4825 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 23/66 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/072 (2013.01); H03F 3/213 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6644 (2013.01); H01L 2224/16052 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/14215 (2013.01); H03F 2200/451 (2013.01);
Abstract
A semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die includes at least one contact pad and a transistor including a first terminal formed within the active layer. A conduction path can include a plurality of first conduction path portions extending between the first terminal and the at least one contact pad and residing within a footprint of the at least one contact pad.