The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

May. 28, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Kahn, Rangersdorf, AT;

Oliver Humbel, Maria Elend, AT;

Philipp Sebastian Koch, Gelugor, MY;

Angelika Koprowski, Klagenfurt, AT;

Christian Maier, Egg am See, AT;

Gerhard Schmidt, Wernberg-Wudmath, AT;

Juergen Steinbrenner, Noetsch, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); C23C 16/345 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 23/291 (2013.01); H01L 23/564 (2013.01); H01L 29/0623 (2013.01);
Abstract

A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.


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