The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Jan. 11, 2021
Applicant:
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/42 (2006.01); C30B 11/00 (2006.01); C30B 29/68 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); C01G 28/00 (2006.01); C30B 33/08 (2006.01);
U.S. Cl.
CPC ...
C30B 29/42 (2013.01); C01G 28/002 (2013.01); C30B 11/003 (2013.01); C30B 29/68 (2013.01); C30B 33/08 (2013.01); H01L 21/02546 (2013.01); H01L 21/02623 (2013.01); H01L 29/0665 (2013.01); H01L 29/20 (2013.01); C01P 2002/02 (2013.01); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01);
Abstract
The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.