The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Aug. 28, 2017
Applicant:

Toray Industries, Inc., Tokyo, JP;

Inventors:

Yuki Masuda, Otsu, JP;

Ryoji Okuda, Otsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 69/26 (2006.01); C08G 73/08 (2006.01); G03F 7/075 (2006.01); G03F 7/20 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); G03F 7/023 (2006.01); H05B 33/02 (2006.01); H01L 29/786 (2006.01); C07C 237/04 (2006.01); H01L 23/12 (2006.01); H05B 33/12 (2006.01); C07C 235/24 (2006.01); H05B 33/22 (2006.01); H10K 50/00 (2023.01); H10K 59/00 (2023.01); C08G 73/10 (2006.01);
U.S. Cl.
CPC ...
C08G 69/26 (2013.01); C07C 235/24 (2013.01); C07C 237/04 (2013.01); C08G 73/08 (2013.01); G03F 7/0233 (2013.01); G03F 7/0751 (2013.01); G03F 7/2022 (2013.01); H01L 23/12 (2013.01); H01L 23/29 (2013.01); H01L 23/31 (2013.01); H01L 29/786 (2013.01); H05B 33/02 (2013.01); H05B 33/12 (2013.01); H05B 33/22 (2013.01); H10K 50/00 (2023.02); H10K 59/00 (2023.02); C08G 73/10 (2013.01);
Abstract

The present invention relates to a novel di-amine compound, a heat-resistant resin using the di-amine compound, and a resin composition using the heat-resistant resin, and a cured film excellent in chemical resistance and film properties even by a thermal treatment at a low temperature of 200° C. or less can be obtained. The novel di-amine compound is represented by the general formula (1). The heat-resistant resin composition of the present invention or the resin composition can be suitably used in a surface protective film and an interlayer dielectric film of a semiconductor device, a dielectric layer or a planarizing layer of an organic electroluminescent element (organic EL), or the like. (In the general formula (1), Rand Reach are a divalent aliphatic group, Rand Reach are a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group bonded to an aromatic group by —O—, —CO—, —SO—, —CH—, —C(CH)— or —C(CF)— (wherein F is fluorine), a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —CO—, —SO—, —CH—, —C(CH)— or —C(CF)— (wherein F is fluorine), Rand Reach are an organic group having any of a hydrogen atom, a halogen atom, a hydroxyl group, a nitro group, a cyano group, an aliphatic group, an aromatic group, an acetyl group, a carboxyl group, an ester group, an amide group, an imide group, and a urea group, A is a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —S—, —CO—, —SO—, —CH—, —C(CH)— or —C(CF)— (wherein F is fluorine), p and q each are an integer number in the range of 0 to 3).


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