The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Aug. 30, 2019
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Toshiki Moriwaki, Tokyo, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H10K 39/32 (2023.01); H10K 30/30 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H10K 30/30 (2023.02);
Abstract

An imaging elementincludes a first electrode, a charge accumulation electrodedisposed apart from the first electrode, a photoelectric conversion unitformed in contact with the first electrodeand above the charge accumulation electrodewith an insulation layerinterposed between the photoelectric conversion unitand the charge accumulation electrode, and a second electrodeformed on the photoelectric conversion unit. The photoelectric conversion unitincludes a photoelectric conversion layerA and an inorganic oxide semiconductor material layerB disposed in an order of the photoelectric conversion layerA and the inorganic oxide semiconductor material layerB from the second electrode side. The inorganic oxide semiconductor material layerB contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.


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