The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jul. 07, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
In Ku Kang, Icheon-si, KR;
Changhan Kim, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); G11C 5/02 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 5/025 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 41/27 (2023.02);
Abstract
A semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; a channel layer penetrating the gate structure; memory patterns respectively located between the channel layer and the conductive layers; air gaps located between the memory patterns; and a sealing layer including first parts respectively including the air gaps and a second part extending between the memory patterns.
Quick Actions:
Kang, In. (2023). Semiconductor device and manufacturing method of semiconductor device (U.S. Patent No. 11800714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11800714
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile