Semiconductor device and manufacturing method of semiconductor device

Abstract

A semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; a channel layer penetrating the gate structure; memory patterns respectively located between the channel layer and the conductive layers; a blocking layer including first parts located between the memory patterns and the conductive layers, and second parts extending between the memory patterns and protruding toward the insulating layers to the inside of the gate structure; and air gaps including a first region located in the second parts and a second region located between the memory patterns.