The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Aug. 17, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoo Jin Choi, Suwon-si, KR;
Jung-Hwan Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device and method for fabricating the same are provided. The nonvolatile memory device comprising: a substrate; a mold structure including a first insulating pattern and a plurality of gate electrodes alternately stacked in a first direction on the substrate; and a word line cut region which extends in a second direction different from the first direction and cuts the mold structure, wherein the word line cut region includes a common source line, and the common source line includes a second insulating pattern extending in the second direction, and a conductive pattern extending in the second direction and being in contact with the second insulating pattern and a cross-section in the second direction.