The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Nov. 30, 2021
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Joon Young Kwak, Seoul, KR;

Eunpyo Park, Seoul, KR;

Suyoun Lee, Seoul, KR;

Inho Kim, Seoul, KR;

Jong-Keuk Park, Seoul, KR;

Jaewook Kim, Seoul, KR;

Jongkil Park, Seoul, KR;

YeonJoo Jeong, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/43 (2006.01); H01L 29/423 (2006.01); H10B 41/30 (2023.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H01L 29/42324 (2013.01); H01L 29/437 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract

A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.


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