The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Sep. 12, 2022
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Naohiro Yoshimura, Tokyo, JP;
Makoto Tanaka, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H03K 17/082 (2006.01); H03K 17/687 (2006.01); H02H 9/02 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H02H 9/02 (2013.01); H02H 9/041 (2013.01); H02M 3/158 (2013.01); H03K 17/687 (2013.01); H03K 2217/0063 (2013.01);
Abstract
Detection transistor MNd flows a detection current IdN to a current path CPwhen an output voltage Vo generated in a load terminal PNis than a ground voltage GND. A current mirror circuit CMptransfers the detection current IdN flowing in the current path CPto a current path CP. Detecting resistor element Rdconverts a mirror current Iflowing in the current path CPto a detection voltage Vd. A control transistor MNcis turned on when the converted detection voltage Vdis higher than a predetermined value. Then, the output transistor QO is controlled to be off while the control transistor MNcis on.