The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Aug. 27, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Byron Neville Burgess, Allen, TX (US);

William Robert Krenik, Garland, TX (US);

Stuart M. Jacobsen, Frisco, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/04 (2006.01); H03H 9/10 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H03H 9/05 (2006.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H03H 3/04 (2013.01); H03H 9/02102 (2013.01); H03H 9/02149 (2013.01); H03H 9/1007 (2013.01); H03H 9/1057 (2013.01); H03H 9/175 (2013.01); H01L 23/3107 (2013.01); H01L 23/3171 (2013.01); H01L 23/49838 (2013.01); H03H 9/0542 (2013.01); H03H 2003/023 (2013.01); H03H 2003/027 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49171 (2015.01); Y10T 29/49172 (2015.01);
Abstract

A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.


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