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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11799060 B1

PDFFull Text
Date of Patent:
Oct. 24, 2023

Filed:

Feb. 23, 2023

Light-emitting device with a plurality of concave parts on the edge of the semiconductor mesa

Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chao-Hsing Chen, Hsinchu, TW;

Cheng-Lin Lu, Hsinchu, TW;

Chih-Hao Chen, Hsinchu, TW;

Chi-Shiang Hsu, Hsinchu, TW;

I-Lun Ma, Hsinchu, TW;

Meng-Hsiang Hong, Hsinchu, TW;

Hsin-Ying Wang, Hsinchu, TW;

Kuo-Ching Hung, Hsinchu, TW;

Yi-Hung Lin, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:

DITTHAVONG, STEINER & MLOTKOWSKI

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/10 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/36 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/385 (2013.01); H01L 25/0753 (2013.01); H01L 33/0075 (2013.01); H01L 33/10 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/46 (2013.01);
Abstract

A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

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