The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 18, 2021
Applicant:

Nikkiso Co., Ltd., Tokyo, JP;

Inventors:

Yusuke Matsukura, Ishikawa, JP;

Tetsuhiko Inazu, Ishikawa, JP;

Cyril Pernot, Ishikawa, JP;

Assignee:

Nikkiso Co., Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract

A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.


Find Patent Forward Citations

Loading…