The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Oct. 08, 2019
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Daniel Richter, Bad Abbach, DE;

Luca Haiberger, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/173 (2006.01); A61B 5/00 (2006.01); H01L 31/0203 (2014.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/173 (2013.01); A61B 5/0059 (2013.01); H01L 31/0203 (2013.01); H01L 31/02164 (2013.01); H01L 31/02165 (2013.01);
Abstract

In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter.


Find Patent Forward Citations

Loading…