The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jul. 07, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

In Ku Kang, Icheon-si, KR;

Changhan Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/66666 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; a channel layer penetrating the gate structure; memory patterns respectively located between the channel layer and the conductive layers; a blocking layer including first parts located between the conductive layers and the memory patterns and second parts extending between the memory patterns; and air gaps respectively located between the blocking layer and the insulating layers.


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Quick Actions:

Kang, In. (2023). Semiconductor device and manufacturing method of semiconductor device (U.S. Patent No. 11799028). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11799028

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