The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Aug. 18, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Koichi Nishi, Tokyo, JP;
Shinya Soneda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate including an upper surface and a lower surface opposing each other and a drift layer of a first conductivity type; a base layer of a second conductivity type; an emitter layer of the first conductivity type and a contact layer of the second conductivity type; an active trench; dummy trenches; a trench gate electrode formed in the active trench; a dummy trench gate electrode formed in each of the dummy trenches; an embedded insulating film formed on the trench gate electrode in the active trench, formed on the dummy trench gate electrode in the dummy trench, and having an upper end lower than the upper surface; and an emitter electrode contacting the emitter layer on the upper surface and an inner wall of the active trench, and contacting the contact layer on the upper surface and an inner wall of the dummy trench.