The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Apr. 15, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Chang Soo Lee, Icheon-si, KR;
Young Ho Yang, Icheon-si, KR;
Sung Soon Kim, Icheon-si, KR;
Hee Soo Kim, Icheon-si, KR;
Hee Do Na, Icheon-si, KR;
Min Sik Jang, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/66666 (2013.01); H01L 29/78642 (2013.01);
Abstract
A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.