The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Sep. 10, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kenichi Matsushita, Nonoichi Ishikawa, JP;
Norio Yasuhara, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: cell and termination regions; a first electrode; a semiconductor part on the first electrode; an insulating film on the semiconductor part in the termination region; mutually-separated second electrodes on the insulating film arranged in a direction from a center toward an outer perimeter of the semiconductor part when viewed from above; a first floating electrode in the insulating film overlapping a gap between an adjacent pair of the second electrodes when viewed from above, and facing one of the pair via the insulating film; and a second floating electrode in the insulating film and separated from and overlapping the first floating electrode in the gap when viewed from above, and facing the other of the pair of second electrodes via the insulating film, wherein the overlapping portion of the second floating electrode is positioned below a portion of the first floating electrode overlapping the gap.