The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jan. 08, 2020
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Geoffrey C. Gardner, West Lafayette, IN (US);

Sergei V. Gronin, West Lafayette, IN (US);

Raymond L. Kallaher, West Lafayette, IN (US);

Michael James Manfra, West Lafayette, IN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02398 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02639 (2013.01); H01L 21/32058 (2013.01); H01L 29/20 (2013.01);
Abstract

A nanowire structure includes a substrate, a graded planar buffer layer, a patterned mask, and a nanowire. The graded planar buffer layer is on the substrate. The patterned mask is on the graded planar buffer layer and includes an opening through which the graded planar buffer layer is exposed. The nanowire is on the graded planar buffer layer in the opening of the patterned mask. A lattice constant of the graded planar buffer layer is between a lattice constant of the substrate and a lattice constant of the nanowire. By providing the graded planar buffer layer, lattice mismatch between the nanowire and the substrate can be reduced or eliminated, thereby improving the quality and performance of the nanowire structure.


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