The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Apr. 23, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Qintao Zhang, Mt Kisco, NY (US);

Samphy Hong, Saratoga Springs, NY (US);

Jason Appell, Albany, NY (US);

David J. Lee, Poughkeepsie, NY (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/76 (2006.01); H01L 21/761 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/0465 (2013.01); H01L 21/761 (2013.01); H01L 21/7602 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01);
Abstract

Methods may include providing a device structure including a well formed in an epitaxial layer, and forming a plurality of shielding layers in the device structure, wherein at least one shielding layer is formed between a pair of adjacent sacrificial gates of a plurality of sacrificial gates. The method may further include forming a contact over the at least one shielding layer, forming a fill layer over the contact, and forming a plurality of trenches into the device structure, wherein at least one trench of the plurality of trenches is formed between a pair of adjacent shielding layers of the plurality of shielding layers, and wherein the at least one trench of the plurality of trenches is defined in part by a sidewall of the fill layer. The method may further include forming a gate structure within the at least one trench of the plurality of trenches.


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