The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jan. 25, 2021
Texas Instruments Incorporated, Dallas, TX (US);
Elizabeth Costner Stewart, Dallas, TX (US);
Jeffrey A. West, Dallas, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Joseph Andre Gallegos, Dallas, TX (US);
Jay Sung Chun, Plano, TX (US);
Zhiyi Yu, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated capacitor on a semiconductor surface on a substrate includes a capacitor dielectric layer including at least one silicon compound material layer on a bottom plate. The capacitor dielectric layer includes a pitted sloped dielectric sidewall. Each of the pits is at least partially filled by one of a plurality of noncontiguous dielectric portions. A conformal dielectric layer may be formed over the noncontiguous dielectric portions. A top metal layer provides a top plate of the capacitor.