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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11798979 B1

PDFFull Text
Date of Patent:
Oct. 24, 2023

Filed:

Jan. 25, 2021

Integrated capacitor with sidewall having reduced roughness

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Elizabeth Costner Stewart, Dallas, TX (US);

Jeffrey A. West, Dallas, TX (US);

Thomas D. Bonifield, Dallas, TX (US);

Joseph Andre Gallegos, Dallas, TX (US);

Jay Sung Chun, Plano, TX (US);

Zhiyi Yu, Allen, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Andrew R. Ralston

Frank D. Cimino

Primary Examiner:

Younes Boulghassoul

Assistant Examiner:

Quinton A Brasfield

Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/02211 (2013.01); H01L 21/02214 (2013.01); H01L 21/02216 (2013.01); H01L 21/02263 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/7682 (2013.01); H01L 21/76822 (2013.01); H01L 21/76825 (2013.01); H01L 21/76837 (2013.01);
Abstract

An integrated capacitor on a semiconductor surface on a substrate includes a capacitor dielectric layer including at least one silicon compound material layer on a bottom plate. The capacitor dielectric layer includes a pitted sloped dielectric sidewall. Each of the pits is at least partially filled by one of a plurality of noncontiguous dielectric portions. A conformal dielectric layer may be formed over the noncontiguous dielectric portions. A top metal layer provides a top plate of the capacitor.

Find Patent Forward Citations

Stewart, Elizabeth. (2023). Integrated capacitor with sidewall having reduced roughness (U.S. Patent No. 11798979). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11798979

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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