The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Feb. 12, 2021
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Hideo Kido, Kanagawa, JP;

Masahiro Tada, Kanagawa, JP;

Takahiro Toyoshima, Kanagawa, JP;

Yasushi Tateshita, Kanagawa, JP;

Hikaru Iwata, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/585 (2023.01); H04N 25/621 (2023.01); H04N 25/70 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14607 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14609 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14638 (2013.01); H01L 27/14641 (2013.01); H04N 25/585 (2023.01); H04N 25/621 (2023.01); H04N 25/70 (2023.01); H01L 27/14645 (2013.01);
Abstract

The present technology relates to a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction. The present technology can be applied to a backside-illumination CMOS image sensor, for example.


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