The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
May. 05, 2020
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/345 (2011.01); H04N 5/378 (2011.01); H04N 3/14 (2006.01); H04N 5/335 (2011.01); H01L 27/148 (2006.01); H04N 5/3745 (2011.01); H04N 25/00 (2023.01); H04N 25/75 (2023.01); H04N 25/441 (2023.01); H04N 25/771 (2023.01); H04N 25/778 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14806 (2013.01); H01L 27/14812 (2013.01); H04N 3/155 (2013.01); H04N 3/1568 (2013.01); H04N 25/00 (2023.01); H04N 25/441 (2023.01); H04N 25/75 (2023.01); H04N 25/771 (2023.01); H04N 25/778 (2023.01);
Abstract
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.