The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Oct. 18, 2021
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Edoardo Brezza, Grenoble, FR;
Alexis Gauthier, Meylan, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/22 (2006.01); H01L 27/082 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/8222 (2006.01); H01L 29/737 (2006.01); H01L 29/732 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0825 (2013.01); H01L 21/2205 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/8222 (2013.01); H01L 29/0821 (2013.01); H01L 29/66242 (2013.01); H01L 29/732 (2013.01); H01L 29/737 (2013.01); H01L 29/7371 (2013.01);
Abstract
A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.