The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jan. 09, 2018
Applicant:

Nissan Chemical Corporation, Tokyo, JP;

Inventors:

Hikaru Tokunaga, Toyama, JP;

Satoshi Hamada, Funabashi, JP;

Keisuke Hashimoto, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01);
Abstract

A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R, R, and Rin Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R, R, and Rmay be the same or different and may bond to each other to form a ring structure.


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