The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
May. 10, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Stefan Krivec, Villach, AT;
Ronny Kern, Villach, AT;
Stefan Kramp, Villach, AT;
Gregor Langer, Klagenfurt, AT;
Hannes Winkler, Villach, AT;
Stefan Woehlert, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0485 (2013.01); H01L 21/02068 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01);
Abstract
A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.