The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Mar. 26, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Chan Kyung Kim, Osan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/1655 (2013.01); G11C 11/1673 (2013.01); G11C 13/0026 (2013.01); G11C 13/0038 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/79 (2013.01);
Abstract

A resistive memory device includes a resistive memory cell, a source line connected to one end of the resistive memory cell, a bit line connected to another end of the resistive memory cell, and a sensing circuit connected to the source line and the bit line. The sensing circuit is configured to generate a pull-up signal that is pulled up from a first voltage level to a second voltage level, based on a read current flowing through the resistive memory cell, generate a pull-down signal that is pulled down from a third voltage level to a fourth voltage level, based on the read current, and determine data that is stored in the resistive memory cell, based on a difference between the generated pull-up signal and the generated pull-down signal.


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