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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11798498 B1

PDFFull Text
Date of Patent:
Oct. 24, 2023

Filed:

Aug. 15, 2022

Method of manufacturing a thin-film transistor having an active layer formed using atomic layer deposition

Applicants:

Samsung Display Co., Ltd., Yongin-si, KR;

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Joon Seok Park, Yongin-si, KR;

Jun Hyung Lim, Seoul, KR;

Jin Seong Park, Seoul, KR;

Jiazhen Sheng, Seoul, KR;

Tae Hyun Hong, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Caleb E Henry

Int. Cl.
CPC ...
G09G 3/3291 (2016.01); G09G 3/3266 (2016.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H10K 59/131 (2023.01); H10K 59/121 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01); H10K 102/10 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3291 (2013.01); G09G 3/3266 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02); H10K 2102/102 (2023.02); H10K 2102/103 (2023.02);
Abstract

A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

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