The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 14, 2019
Applicant:

Osaka University, Osaka, JP;

Inventor:

Seiichi Tagawa, Suita, JP;

Assignee:

OSAKA UNIVERSITY, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01);
Abstract

A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1<C2<10×C1 relative to a ratio (C2=A2/B2) of a value (A2) representing an acid in flood exposure to a value (B2) representing a base in the flood exposure.


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Tagawa, Seiichi. (2023). Resist pattern formation method (U.S. Patent No. 11796919). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11796919

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