The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Mar. 18, 2021
Applicant:

New Degree Technology, Llc, Baltimore, MD (US);

Inventors:

Hao Li, Chandler, AZ (US);

Zhiyun Chen, Baltimore, MD (US);

Assignee:

NEW DEGREE TECHNOLOGY, LLC, Baltimore, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 1/22 (2006.01); H01L 29/8605 (2006.01); H01L 49/02 (2006.01); G01L 1/14 (2006.01); G01L 1/18 (2006.01); G06F 3/041 (2006.01);
U.S. Cl.
CPC ...
G01L 1/2293 (2013.01); G01L 1/148 (2013.01); G01L 1/2262 (2013.01); G01L 1/2281 (2013.01); H01L 28/20 (2013.01); H01L 29/8605 (2013.01); G01L 1/18 (2013.01); G06F 3/041 (2013.01); G06F 2203/04105 (2013.01);
Abstract

A hybrid strain sensing system and the method of making such a system provides a thin semiconductor film with strain sensors and signal processing circuits integrated deposited thereon. The semiconductor film may be further processed and then mounted onto a substrate to be used for strain, force, or other related measurements. The system combines the high sensitivity of a semiconductor strain gauge with the high level of integration of semiconductor integrated circuits (IC)s. Both are highly desirable features for applications where miniaturization and/or flexibility are important requirements.


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