The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Sep. 16, 2019
Applicant:

Applied Quantum Engeries, Llc, Naples, FL (US);

Inventors:

Benjamin Wolfe, Naples, FL (US);

George Paskalov, Torrance, CA (US);

Rick Jarvis, Naples, FL (US);

Jerzy P. Puchacz, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); A01C 1/08 (2006.01); A61L 2/14 (2006.01); H05H 1/46 (2006.01); A01C 1/00 (2006.01); H01J 37/32 (2006.01); A23B 9/02 (2006.01); A23B 9/18 (2006.01);
U.S. Cl.
CPC ...
A01C 1/08 (2013.01); A01C 1/00 (2013.01); A61L 2/14 (2013.01); H01J 37/32 (2013.01); H05H 1/46 (2013.01); A23B 9/02 (2013.01); A23B 9/025 (2013.01); A23B 9/18 (2013.01); A61L 2202/16 (2013.01); H05H 1/466 (2021.05); H05H 2242/26 (2021.05);
Abstract

Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about n×10-n×10orto 0.4 W/cm. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).


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