The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Sep. 20, 2019
Applicant:
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Inventors:
Candice Fanny Thomas, St-Egrève, FR;
Michael James Manfra, West Lafayette, IN (US);
Assignee:
Microsoft Technology Licensing, LLC, Redmond, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 10/00 (2022.01); H10N 60/85 (2023.01); H10N 60/80 (2023.01); H10N 60/12 (2023.01); H10N 60/01 (2023.01);
U.S. Cl.
CPC ...
H10N 60/805 (2023.02); G06N 10/00 (2019.01); H10N 60/0912 (2023.02); H10N 60/12 (2023.02); H10N 60/85 (2023.02);
Abstract
A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided.