The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jun. 02, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Young In Hwang, Yongin-si, KR;

Ji Hye Kong, Yongin-si, KR;

Suk Hoon Ku, Yongin-si, KR;

Sung Wook Kim, Yongin-si, KR;

Jin A Lee, Yongin-si, KR;

Yun Sik Joo, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H10K 59/121 (2023.01); G09G 3/3233 (2016.01); H01L 29/786 (2006.01); G09G 3/20 (2006.01); G09G 3/3266 (2016.01); G09G 3/3275 (2016.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); G09G 3/3233 (2013.01); G09G 3/2007 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0809 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/0247 (2013.01); H01L 27/1251 (2013.01); H01L 29/78696 (2013.01);
Abstract

A display device includes pixels. Each of the pixels includes: a first transistor including a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node; a second transistor including a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node; a first sub-transistor including a gate electrode connected to the first scan line, a first electrode connected to the first node, and a second electrode connected to a fourth node; and a second sub-transistor including a gate electrode connected to the first scan line, a first electrode connected to the fourth node, and a second electrode connected to the third node. A channel width of the second sub-transistor is wider than a channel width of the first sub-transistor.


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