The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Aug. 13, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Eric Raymond Evarts, Niskayuna, NY (US);

Virat Vasav Mehta, Menands, NY (US);

Oscar van der Straten, Guilderland Center, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/20 (2023.02); G11C 11/161 (2013.01); H10N 52/00 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.


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