The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Nov. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Eunsub Shim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/766 (2023.01); H01L 27/146 (2006.01); H04N 25/778 (2023.01); H04N 25/779 (2023.01); G06T 3/00 (2006.01); G06T 3/40 (2006.01); G06T 7/80 (2017.01);
U.S. Cl.
CPC ...
H04N 25/766 (2023.01); G06T 3/0018 (2013.01); G06T 3/4046 (2013.01); G06T 7/80 (2017.01); H01L 27/14616 (2013.01); H04N 25/778 (2023.01); H04N 25/779 (2023.01);
Abstract

An image sensor including: a pixel array including pixels each pixel including a photoelectric conversion element, a transmission transistor to transmit photocharges generated by the photoelectric conversion element to a floating diffusion node, and a reset transistor to reset the floating diffusion node based on a pixel power voltage; and a row driver to control the pixels, wherein the row driver includes a transmission control signal generator to provide a transmission control signal to the transmission transistor, wherein the transmission control signal generator includes: a first transistor to which a first voltage is applied; a second transistor connected to the first transistor; a third transistor to which a second voltage is applied, the second voltage being higher than the first voltage; and a fourth transistor connected to the third transistor, wherein an ON resistance of the second transistor is different from an ON resistance of the first transistor.


Find Patent Forward Citations

Loading…