The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Nov. 05, 2019
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventor:

Kazuhiro Takigawa, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/25 (2006.01); H03H 9/02 (2006.01); H03H 9/145 (2006.01);
U.S. Cl.
CPC ...
H03H 9/25 (2013.01); H03H 9/02559 (2013.01); H03H 9/02637 (2013.01); H03H 9/02889 (2013.01); H03H 9/02992 (2013.01); H03H 9/14541 (2013.01);
Abstract

An acoustic wave device includes a piezoelectric substrate, and an IDT electrode provided on the piezoelectric substrate. The IDT electrode includes an overlap region where first and second electrode fingers overlap each other in a first direction. The overlap region includes a central region located in a substantially central portion of the overlap region with respect to a second direction. The central region includes a low acoustic velocity portion with an acoustic velocity less than the acoustic velocity in another portion. The overlap region includes first and second low acoustic velocity regions. The first and second low acoustic velocity regions are respectively located on first-and-second-busbar sides from the central region. The IDT electrode includes first and second high acoustic velocity regions. The first and second high acoustic velocity regions are respectively located outside the first and second low acoustic velocity regions with respect to the second direction.


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