The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Feb. 24, 2022
Applicant:

Analog Devices, Inc., Wilmington, MA (US);

Inventor:

Keith E. Benson, Hopkinton, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 3/14 (2006.01); H03F 1/30 (2006.01); H03F 3/213 (2006.01); G01K 7/16 (2006.01);
U.S. Cl.
CPC ...
H03F 1/306 (2013.01); G01K 7/16 (2013.01); H03F 3/213 (2013.01); H03F 2200/165 (2013.01); H03F 2200/451 (2013.01); H03F 2200/468 (2013.01);
Abstract

Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.


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