The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
May. 03, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyungjun Kim, Suwon-si, KR;
Changsoo Lee, Seoul, KR;
Chan Kwak, Yongin-si, KR;
Euncheol Do, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RMOwhere R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3<B/A<1.7, and 9.0≤C<10.0.